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3N60AL-TF3-T

3A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N60A

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0 V, ID = 250 μA

Drain-Source Leakage Current

IDSS

VDS = 600 V, VGS = 0 V

Gate-Source Leakage Current Forward

Reverse

IGSS

VGS = 30 V, VDS = 0 V

VGS = -30 V, VDS = 0 V

Breakdown Voltage Temperature

Coefficient

△BVDSS/△TJ

ID = 250 μA,

Referenced to

25°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS = VGS, ID = 250 μA

Static Drain-Source On-State Resistance

RDS(ON) VGS = 10 V, ID = 1.5A

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS = 25 V, VGS = 0 V,

f = 1MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

tD(ON)

tR

tD(OFF)

tF

VDD = 300V, ID = 3.0 A,

RG = 25Ω

(Note 1, 2)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

VDS= 480V,ID= 3.0A,

VGS= 10 V (Note 1, 2)

QDD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 3.0 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR

VGS = 0 V, IS = 3.0 A,

QRR dIF/dt = 100 A/μs (Note 1)

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

2. Essentially independent of operating temperature.

MIN TYP MAX UNIT

600

V

10 μA

100 nA

-100 nA

0.6

V/℃

2.0

4.0 V

2.8 3.6 Ω

350 450 pF

50 65 pF

5.5 7.5 pF

10 30 ns

30 70 ns

20 50 ns

30 70 ns

10 13 nC

2.7

nC

4.9

nC

1.4 V

3.0 A

12 A

210

ns

1.2

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 8

QW-R502-610.A

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