3N258-E4/51 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

3N258-E4/51

Glass Passivated Single-Phase Bridge Rectifier

Vishay Semiconductors 

www.vishay.com

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

10

2KBPxxM, 3N25x

Vishay General Semiconductor

1

0.1

1

10

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style KBPM

0.125 x 45°

(3.2)

0.600 (15.24)

0.560 (14.22)

0.460 (11.68) 0.500 (12.70)

0.420 (10.67) 0.460 (11.68)

0.60

(15.2)

MIN.

0.034 (0.86)

0.028 (0.76)

DIA.

0.200 (5.08)

0.180 (4.57)

0.50 (12.7) MIN.

0.060

(1.52)

0.160 (4.1)

0.140 (3.6)

0.105 (2.67)

0.085 (2.16)

Polarity shown on front side of case: positive lead by beveled corner

Revision: 04-Jul-13

3

Document Number: 88532

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: