3DK2222A-TO-92 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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3DK2222A-TO-92

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

3DK2222A TRANSISTOR(NPN )

TO-92

FEATURE

Power dissipation

PCM : 0.625 W(Tamb=25℃)

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

123

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

75

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

600

mA

PD

Total Device Dissipation

625

mW

TJ

Junction Temperature

150

℃

Tstg

Junction and Storage Temperature

-55-150

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Storage time

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEX

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)(1)

VCE(sat)(2)

VBE(sat)

tstg

fT

Test conditions

Ic= 10uA , IE=0

IC= 10 mA , IB=0

IE= 10uA, IC=0

VCB= 60 V , IE=0

VCE= 60 V , VEB(OFF)=3V

VEB= 3 V , IC=0

VCE=10 V, IC= 150mA

VCE=10 V, IC= 0.1mA

VCE=10 V, IC= 500mA

IC= 500 mA, IB= 50 mA

IC= 150 mA, IB= 15 mA

IC= 500 mA, IB= 50 mA

VCC=30V, IC=150mA, IB1=IB2=15mA

VCE= 20 V, IC= 20mA, f = 100MHz

MIN MAX UNIT

75

V

40

V

6

V

10

nA

10

nA

10

nA

100 300

40

42

0.6

V

0.3

V

1.2

V

225

ns

300

MHz

CLASSIFICATION OF hFE(1)

Rank

Range

L

100-200

H

200-300

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