36MB10 Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
36MB10 Datasheet PDF : 4 Pages
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SEMICONDUCTOR
36MB RRooHHSS
Nell High Power Products
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RSM voltage (non-repetitve peak reverse voltage)
Maximum DC blocking voltage
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
08
800
900
800
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
I2t
VISO
TJ,TSTG
36MB
10
12
1000
1200
1100
1000
1300
1200
35
400
16
1600
1700
1600
UNIT
V
V
V
A
A
660
A2s
2500
V
-55 to 150
ºC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
08
Maximum instantaneous forward drop per diode
IF = 17.5A
VF
Maximum reverse DC current at rated DC blocking
voltage per diode
TA = 25°C
TA = 150°C
IR
Typical junction capacitance per diode
4V, 1MHz
CJ
36MB
10
12
1.1
5
500
300
UNIT
16
V
µA
pF
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
08
Typical thermal resistance
RθJC(1)
36MB
10
12
1.4
UNIT
16
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
#10 screw
Page 2 of 4
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