SST29EE010-250-4I-EN Ver la hoja de datos (PDF) - Silicon Storage Technology
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SST29EE010-250-4I-EN Datasheet PDF : 30 Pages
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1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
AC CHARACTERISTICS
Data Sheet
TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE010
SST29EE010-70
SST29EE010-90
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
70
90
ns
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
30
40
ns
TCLZ1
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
20
30
ns
TOHZ1
OE# High to High-Z Output
20
30
ns
TOH1
Output Hold from Address Change
0
0
ns
T10.2 1061
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29VE010
SST29VE010-150
SST29VE010-200
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
TCE
Chip Enable Access Time
TAA
Address Access Time
150
200
ns
150
200
ns
150
200
ns
TOE
Output Enable Access Time
80
100
ns
TCLZ1
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
50
50
ns
TOHZ1
OE# High to High-Z Output
50
50
ns
TOH1
Output Hold from Address Change
0
0
ns
T11.2 1061
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
11
S71061-11-000
9/05
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