SST29EE010-250-4C-NN Ver la hoja de datos (PDF) - Silicon Storage Technology

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SST29EE010-250-4C-NN

1 Mbit (128K x8) Page-Write EEPROM

Silicon Storage Technology 

1 Mbit Page-Write EEPROM

SST29EE010 / SST29VE010

Data Sheet

TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

TPU-WRITE1

Power-up to Read Operation

Power-up to Write Operation

100

µs

5

ms

T7.1 1061

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 8: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T8.0 1061

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 9: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification Units

Test Method

NEND1

TDR1

Endurance

Data Retention

10,000

100

Cycles

Years

JEDEC Standard A117

JEDEC Standard A103

ILTH1

Latch Up

100

mA

JEDEC Standard 78

T9.5 1061

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2005 Silicon Storage Technology, Inc.

10

S71061-11-000

9/05

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