HM628128D Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HM628128D

1 M SRAM (128-kword × 8-bit)

Hitachi -> Renesas Electronics 

Operation Table

CS1

CS2

WE

OE

I/O

H

H

×

×

High-Z

L

L

×

×

High-Z

L

L

×

×

High-Z

L

H

H

L

Dout

L

H

L

H

Din

L

H

L

L

Din

L

H

H

H

High-Z

Note: H: VIH, L: VIL, ×: VIH or VIL

HM628128D Series

Operation

Standby

Standby

Standby

Read

Write

Write

Output disable

Absolute Maximum Ratings

Parameter

Symbol

Power supply voltage relative to VSS

Terminal voltage on any pin relative to VSS

Power dissipation

Storage temperature range

VCC

VT

PT

Tstg

Storage temperature range under bias

Tbias

Notes: 1. VT min: –1.5 V for pulse half-width ≤ 30 ns

2. Maximum voltage is +7.0 V

Value

–0.5 to +7.0

–0.5*1 to VCC + 0.3*2

1.0

–55 to +125

–20 to +85

Unit

V

V

W

°C

°C

DC Operating Conditions

Parameter

Symbol

Min

Typ

Supply voltage

VCC

VSS

Input high voltage

VIH

Input low voltage

VIL

Ambient temperature range

Ta

4.5

5.0

0

0

2.2

—

–0.3

—

–20

—

Note: 1. VIL min: –1.5 V for pulse half-width ≤ 30 ns

Max

5.5

0

VCC + 0.3

0.8

+70

Unit

V

V

V

V

°C

Note

1

5

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