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VS-30CPQ045-N3(2018) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
VS-30CPQ045-N3
(Rev.:2018)
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
VS-30CPQ045-N3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
www.vishay.com
VS-30CPQ0..-N3 Series
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
1
2
3
TO-247AC 3L
1
3
Anode
2 Anode
Common
cathode
PRIMARY CHARACTERISTICS
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Package
2 x 15 A
35 V, 40 V, 45 V
0.50 V
70 mA at 125 °C
150 °C
20 mJ
TO-247AC 3L
Circuit configuration
Common cathode
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30CPQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
15 Apk, TJ = 125 °C (per leg)
VALUES
30
35 to 45
1020
0.50
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-30CPQ035-N3
35
VS-30CPQ040-N3
40
VS-30CPQ045-N3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
See fig. 7
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 124 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 3 A, L = 4.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
30
1020
265
20
3
UNITS
A
mJ
A
Revision: 02-Jan-18
1
Document Number: 96453
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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