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Número de pieza
componentes Descripción
2SK4016 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK4016
Silicon N-Channel MOS Type (π −MOS VI) Field Effect Transistor
Toshiba
2SK4016 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
−
Tc
2.0
COMMON SOURCE
VDS
=
10 V
PULSE TEST
1.6
1.2
0.8
ID
=
10 A
6
3
0.4
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK4016
I
DR
−
V
DS
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
5
10
1
3
0.1
1 VGS
=
0 V
-0
-0.4
-0.8
-1.2
-1.6
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
10000
C
−
V
DS
Ciss
1000
Coss
100
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
10
Tc
=
25°C
0.1
1
Crss
10
100
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
V
th
−
Tc
4
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
3
2
1
0
−
80
−
40
0
40
80
120 160
CASE TEMPERATURE Tc (°C)
P
D
−
Tc
80
60
40
20
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
600
COMMON SOURCE
ID
=
13 A
500
Tc
=
25°C
PULSE TEST
400
VDS
15
12.5
VDD
=
100V
200V
10
400V
300
7.5
VGS
200
5
100
2.5
0
0
0
20
40
60
80
TOTAL GATE CHARGE Q
g
(nC)
4
2010-01-29
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