2SK4016(2005) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK4016 Datasheet PDF : 6 Pages
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2SK4016
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6.5 A
VDS = 10 V, ID = 6.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
⎯
±10
μA
±30 ⎯
⎯
V
⎯
⎯
100
μA
600 ⎯
⎯
V
2.0
⎯
4.0
V
⎯ 0.33 0.50 Ω
5.0
10
⎯
S
⎯ 3100 ⎯
⎯
20
⎯
pF
⎯ 270 ⎯
tr
10 V
ID = 6.5 A VOUT
⎯
60
⎯
VGS
0V
ton
RL =
⎯ 110 ⎯
15 Ω
30Ω
ns
tf
⎯
50
⎯
VDD ∼− 200 V
toff
Duty <= 1%, tw = 10 μs
⎯ 215 ⎯
Qg
Qgs
VDD ∼− 400 V, VGS = 10 V, ID = 13 A
Qgd
⎯
62
⎯
⎯
40
⎯
nC
⎯
22
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 13 A, VGS = 0 V
IDR = 13 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯
⎯
13
A
⎯
⎯
52
A
⎯
⎯
−1.7
V
⎯
220
⎯
ns
⎯
0.8
⎯
μC
Marking
2SK4016
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-05-30
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