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Número de pieza
componentes Descripción
2SK4014 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK4014
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV)
Toshiba
2SK4014 Datasheet PDF : 6 Pages
1
2
3
4
5
6
5
Common source
Tc
=
25°C
Pulse test
4
I
D
– V
DS
10
8
3
6
5.25
5
2
4.75
4.5
1
VGS
=
4 V
0
0
2
4
6
8
10
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
2SK4014
I
D
– V
DS
10
10
Common source
8
6
Tc
=
25°C
Pulse test
8
5.75
6
5.5
4
5.25
5
2
4.5
VGS
=
4 V
0
0
10
20
30
40
50
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
16
Common source
VDS
=
10 V
Pulse test
12
I
D
– V
GS
8
25
4
100
Tc
= −
55°C
0
0
2
4
6
8
10
GATE
−
SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
20
Common source
Tc
=
25°C
Pulse test
16
12
ID
=
6 A
8
3
4
1.5
0
0
4
8
12
16
20
GATE
−
SOURCE VOLTAGE V
GS
(V)
100
Common source
VDS
=
10 V
Pulse test
⎪
Y
fs
⎪ −
I
D
10
Tc
= −
55°C
100
25
1
R
DS (ON)
−
I
D
10
Common source
Tc
=
25°C
Pulse test
VGS
=
10 V
1
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2010-01-29
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