Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
2SK3847 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3847
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)
Toshiba
2SK3847 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
−
Tc
50
Common source
Pulse test
40
30
VGS
=
4.5 V
20
ID
=
32 A
16
8
ID
=
32, 16, 8 A
10
VGS
=
10 V
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
2SK3847
I
DR
−
V
DS
100
10
5
10
3
1
VGS
=
0,
−
1 V
Common source
Tc
=
25°C
Pulse test
1
0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
Drain
−
source voltage V
DS
(V)
10000
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
C
−
V
DS
Ciss
1000
100
0.1
Coss
Crss
1
10
100
Drain
−
source voltage V
DS
(V)
V
th
−
Tc
5
Common source
VDS
=
10 V
ID
=
1 mA
4
Pulse test
3
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
−
Tc
50
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input/output
characteristics
50
Common source
20
ID
=
32 A
Tc
=
25°C
40
Pulse test
16
VDS
30
12
16
20
8
8
VDS
=
32 V
10
4
VGS
0
0
0
20
40
60
80
100
Total gate charge Q
g
(nC)
4
2006-09-27
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]