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2SK3847

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Gate leakage current

Drain cutoff current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

V (BR) DSX

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = 40 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

ID = 10 mA, VGS = −20 V

VDS = 10 V, ID = 1 mA

VGS = 4.5 V, ID = 16 A

VGS = 10 V, ID = 16 A

VDS = 10 V, ID = 16 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

10 V

VGS

0V

ID = 16 A Output

VDD ≈ 20 V

2SK3847

Min Typ. Max Unit

—

—

±10

μA

—

— 100 μA

40

—

—

V

15

—

—

1.5

—

2.5

V

—

19

26

mΩ

—

12

16

18

36

—

S

— 1980 —

— 210 —

pF

— 300 —

—

7

—

—

22

—

ns

—

10

—

Turn−off time

Total gate charge (gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“Miller”) charge

toff

Duty ≤ 1%, tw = 10 μs

Qg

Qgs

VDD ≈ 32 V, VGS = 10 V, ID = 32 A

Qgd

—

60

—

—

40

—

—

28

—

nC

—

12

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 32 A, VGS = 0 V

IDR = 32 A, VGS = 0 V

dlDR/dt = 50 A/μS

Min Typ. Max Unit

—

—

32

A

—

—

96

A

—

— −1.5

V

—

40

—

ns

—

24

—

nC

Marking

K3 847

Part No. (or abbreviation code)

Lot No.

A line indicates a

lead (Pb) – free package or

lead (Pb) – free finish.

2

2006-09-27

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