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Número de pieza
componentes Descripción
2SK3798 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3798
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Toshiba
2SK3798 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
4
10
COMMON SOURCE
6
Tc
=
25°C
5.75 PULSE TEST
3
5.5
5.25
2
5
1
4.75
VGS
=
4.5 V
0
0
4
8
12
16
20
24
DRAIN-SOURCE VOLTAGE V
DS
(V)
2SK3798
I
D
– V
DS
8
COMMON SOURCE
Tc
=
25°C
10
PULSE TEST
6
6
4
5.75
5.5
2
5.25
5
4.75
0
VGS
=
4.5 V
0 4 8 12 16 20 24 28 32 36
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
8
COMMON SOURCE
VDS
=
20 V
6 PULSE TEST
Tc
= −
55°C
25
4
100
2
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25
℃
16
PULSE TEST
12
ID
=
4 A
8
2
4
1
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
COMMON SOURCE
VDS
=
20 V
PULSE TEST
Tc
= −
55°C
25
100
1
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
VGS
=
10, 15 V
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
1
0.01
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2009-09-29
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