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Número de pieza
componentes Descripción
K3700 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
K3700
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
Toshiba
K3700 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
Common source 8
Tc
=
25°C
6
Pulse Test
10
4
5.5
5.25
3
5
2
4.75
1
VGS
=
4.5 V
0
0
4
8
12
16
20
24
Drain-source voltage VDS (V)
10
Common source
VDS
=
10 V
Pulse Test
8
I
D
– V
GS
6
4
Tc
= −
55°C
2
100
25
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
2SK3700
I
D
– V
DS
6
Common source
10
Tc
=
25°C
5
Pulse Test
8
6
4
5.5
5.25
3
5
2
4.75
1
VGS
=
4 .5V
0
0
10
20
30
Drain-source voltage VDS (V)
V
DS
– V
GS
20
Common source
Tc
=
25°C
Pulse Test
14
12
ID
=
5 A
8
3
4
1.5
0
0
4
8
12
16
20
Gate-source voltage VGS (V)
10
Common source
VDS
=
10 V
Pulse Test
⎪
Y
fs
⎪
– I
D
Tc
= −
55°C
25
100
1
0.1
0.1
1
10
Drain current ID (A)
10
5
3
1
0.01
R
DS (ON)
– I
D
VGS
=
10 V
、
15V
Common source
Tc
=
25°C
VGS
=
10 V
Pulse Test
0.1
1
10
Drain current ID (A)
3
2009-09-29
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