2SK370 Ver la hoja de datos (PDF) - Toshiba
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2SK370 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK370
2SK370
For Low Noise Audio Amplifier Applications
Unit: mm
• Suitable for use as first stage for equalizer and MC head amplifiers.
• High |Yfs|: |Yfs| = 22 ms (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
• High breakdown voltage: VGDS = −40 V
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
• Complementary to 2SJ108
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
−40
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
―
2-4E1C
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF)
⎪Yfs⎪
Ciss
Crss
NF (1)
VDS = 10 V, ID = 0.1 μA
VDS = 10 V, VGS = 0, f = 1 kHz,
IDSS = 3 mA
VDS = 10 V, VGS = 0, f = 1 MHz
VDG = 10 V, ID = 0, f = 1 MHz
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f = 10 Hz
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f = 1 kHz
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−40 ⎯
⎯
V
2.6
⎯
20
mA
−0.2
⎯
−1.5
V
8
22
⎯
mS
⎯
30
⎯
pF
⎯
6
⎯
pF
⎯
1.0
10
dB
⎯
0.5
2
1
2007-11-01
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