2SK3636 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SK3636

SWITCHING N-CHANNEL POWER MOSFET

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

2SK3636

Features

Avalanche energy capacity guaranteed: EAS 20 mJ

Gate-source surrender voltage VGSS = 30 V guaranteed

High-speed switching: tf = 50 ns

No secondary breakdown

TO-263

+0.2

4.57 +0.1

-0.2

1.27-0.1

Unit: mm

1.27+0.1

-0.1

0.1max

+0.2

2.54-0.2

+0.1

5.08-0.1

0.81+0.1

-0.1

2.54

0.4+0.2

-0.2

1 Gate

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Peak drain current

Avalanche energy capability

Power dissipation Ta = 25

Power dissipation

Channel temperature

Storage temperature

Symbol

Rating

Unit

VDSS

800

V

VGSS

30

V

ID

3

A

IDP

6

A

EAS

20

mJ

2

PD

W

35

Tch

150

Tstg

-55 to +150

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

1 of 2

Share Link: