2SK3229 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK3229

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK3229

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS (on) = 6 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0003AE-A

(Package name: TO-220C•FM)

123

D

G

S

REJ03G1095-0200

(Previous: ADE-208-766)

Rev.2.00

Sep 07, 2005

1. Gate

2. Drain

3. Source

Rev.2.00 Sep 07, 2005 page 1 of 3

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