2SK3211 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK3211

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Reverse Drain Current vs.

Source to Drain Voltage

20

Pulse Test

16

12

10 V

8

5V

4

VGS = 0, –5 V

0

0.2 0.4 0.6 0.8 1.0

Source to Drain Voltage VSD (V)

2SK3211

Maximun Avalanche Energy vs.

Channel Temperature Derating

50

I AP = 25 A

40

VDD = 50 V

duty < 0.1 %

Rg > 50 Ω

30

20

10

0

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin

15 V

Avalanche Test Circuit

Avalanche Waveform

V DS

Monitor

Rg

50 Ω

L

I AP

Monitor

D. U. T

VDD

EAR =

1

2

• L • I AP2•

VDSS

VDSS – V DD

I AP

ID

V(BR)DSS

VDS

VDD

0

7

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