2SK3211 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK3211 Datasheet PDF : 10 Pages
| |||
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.5
Pulse Test
2.0
1.5
1.0
I D = 15 A
10 A
0.5
5A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
2SK3211
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
VGS = 4 V
50
10 V
20
10
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150
5,10,15 A
100 V GS = 4 V
5,10,15 A
50
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20
25 °C
75 °C
10
5
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5
Share Link: 