2SK3211 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK3211

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3211(L), 2SK3211(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS = 60 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

ADE-208-761A (Z)

2nd. Edition

February 1999

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