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Número de pieza
componentes Descripción
2SK3312(2006) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3312
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)
Toshiba
2SK3312 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
15
10
C O M M O N SO U R C E
T c=25℃
7.25
P U LS E T E S T
4
7.0
3
6.75
6.5
2
6.25
1
6.0
V
GS
=5.5V
0
0
2
4
6
8
10
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
10
C O M M O N SO U R C E
V
D S
=20V
8
P U LS E T E S T
I
D
– V
GS
6
4
25
Tc=-55℃
2
100
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE V
GS
(V)
2SK3312
10
15 10
8
6
4
2
I
D
– V
DS
7.75
C O M M O N SO U R C E
T c=25℃
P U LS E T E S T
7.5
7.25
7.0
6.75
6.5
V
GS
=6.0V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE V
DS
(V)
20
16
12
8
4
0
0
V
DS
– V
GS
C O M M O N SO U R C E
T c=25℃
P U LSE T E S T
I
D
=6A
3
1 .5
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
100
C O M M O N SO U R C E
V
D S
=20V
P U LS E T E S T
10
TC=-55℃
25
100
1
R
DS (ON)
– I
D
10
C O M M O N SO U R C E
T c=25℃
P U LS E T E S T
1
VGS=10,15V
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
0.1
100
0.1
3
1
10
DRAIN CURRENT I
D
(A)
2006-11-08
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