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Número de pieza
componentes Descripción
2SK3236 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
2SK3236 Datasheet PDF : 6 Pages
1
2
3
4
5
6
0.1
Common source
Pulse test
0.08
R
DS (ON)
−
Tc
0.06
0.04
0.02
0
−
80
20
VGS
=
4 V
10
35
20
VGS
=
10 V
10
−
40
0
40
80
120
160
Case temperature Tc (°C)
2SK3236
I
DR
−
V
DS
100
10
5
3
1
10
VGS
=
0 V
Common source
Tc
=
25°C
Pulse test
1
0.0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
Drain-source voltage V
DS
(V)
Capacitance – V
DS
100000
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
10000
Ciss
1000
100
0.1
Coss
Crss
1
10
100
Drain-source voltage V
DS
(V)
V
th
−
Tc
3
2.5
2
1.5
1
Common source
VDS
=
10 V
0.5
ID
=
1 mA
Pulse test
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
−
Tc
50
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input/output characteristics
80
20
Common source
ID
=
35 A
Tc
=
25°C
Pulse test
60
VDS
15
24
12
40
10
VDD
=
48 V
20
5
VGS
0
0
0
20
40
60
80
Total gate charge Q
g
(nC)
4
2006-11-17
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