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Número de pieza
componentes Descripción
2SK3236 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
2SK3236 Datasheet PDF : 6 Pages
1
2
3
4
5
6
20
10
I
D
−
V
DS
4
16
8
5
3.75
3.5
12
3.25
8
4
VGS
=
3 V
Common source, Tc
=
25°C
Pulse test
0
0
0.2
0.4
0.6
0.8
1
Drain-source voltage V
DS
(V)
2SK3236
100
10
6
8
5
80
I
D
−
V
DS
4.5
Common source
Tc
=
25°C
Pulse test
60
4
40
20
3.5
VGS
=
3 V
0
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
I
D
−
V
GS
100
25
Tc
= −
55°C
100
80
60
40
20
Common source
VDS
=
10 V
Pulse test
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
V
DS
−
V
GS
1
Common source
Tc
=
25°C
Pulse test
0.8
0.6
ID
=
35 A
0.4
20
0.2
10
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
⎪
Y
fs
⎪ −
I
D
100
Tc
= −
55°C
25
100
10
R
DS (ON)
−
I
D
0.1
4
VGS
=
10 V
0.01
Common source
VDS
=
10 V
Pulse test
1
1
10
100
Drain current I
D
(A)
Common source
Tc
=
25°C
Pulse test
0.001
1
10
100
Drain current I
D
(A)
3
2006-11-17
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