K3355 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
K3355 Datasheet PDF : 8 Pages
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PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-263 (MP-25ZJ)
(10)
4
4.8 MAX.
1.3±0.2
1.4±0.2
0.7±0.2
(0.5R()0.8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2SK3355
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
(10)
1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4) TO-220SMD(MP-25Z)Note
(10)
4
4.8 MAX.
1.3±0.2
1.4±0.2
1.0±0.3
(0.5(0R.)8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Note This Package is produced only in Japan.
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D14132EJ2V0DS00
7
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