2SK3326 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

2SK3326

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

PACKAGE DRAWING (Unit: mm)

Isolated TO-220(MP-45F)

10.0±0.3

4.5±0.2

3.2±0.2

2.7±0.2

2SK3326

0.7±0.1

2.54

1.3±0.2

1.5±0.2

2.54

2.5±0.1

0.65±0.1

1 23

1. Gate

2. Drain

3. Source

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Source

Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

Data Sheet D14204EJ1V0DS00

7

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