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Número de pieza
componentes Descripción
2SK3326 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
2SK3326
MOS FIELD EFFECT TRANSISTOR
NEC => Renesas Technology
2SK3326 Datasheet PDF : 8 Pages
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2SK3326
Figure17. SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
16
14
12
E
AS
= 10.7 mJ
10
I
D(peak)
= I
AS
R
G
= 25
Ω
V
GS
= 20 V
→
0 V
V
DD
= 150 V
8
6
4
2
0
25 50 75 100 125 150 175
Starting T
ch
- Starting Channel Temperature - ˚C
Figure18. SINGLE AVALANCHE ENERGY vs
INDUCTIVE LOAD
100
I
AS
= 10 A
10
R
G
= 25
Ω
V
DD
= 150 V
V
GS
= 20 V
→
0 V
Starting T
ch
= 25 ˚C
E
AS
= 10.7 mJ
1
0.1
10
µ
100
µ
1m
L - Inductive Load - H
10 m
6
Data Sheet D14204EJ1V0DS00
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