2SK3295 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
2SK3295 Datasheet PDF : 8 Pages
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2SK3295
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
2)TO-262
(10)
4
4.8 MAX.
1.3±0.2
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3)TO-263 (MP-25ZK)
No plating
10.0±0.2
0.4
8.4 TYP.
4
4.45±0.2
1.3±0.2
0.025 to
0.25
0.7±0.15
2.54
123
0.5±0.2
0 to 8 o
0.25
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4)TO-263 (MP-25ZJ)
(10)
4
4.8 MAX.
1.3±0.2
1.4±0.2
0.7±0.2
(0.5R()0.8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD.
When this device actually used, an additional protection circuit is
externally required if a voltage exceeding the rated voltage may be
applied to this device.
6
Data Sheet D14064EJ2V0DS
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