2SK3295 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
2SK3295 Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
TEST CONDITIONS
VDS = 20 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 18 A
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 18 A
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 10 V , ID = 18 A
VGS(on) = 10 V
RG = 10 Ω
VDD = 16 V
VGS = 10 V
ID = 35 A
IF = 35 A, VGS = 0 V
IF = 35 A, VGS = 0 V
di/dt = 100 A/µs
2SK3295
MIN.
1.0
7.5
TYP.
13
21
720
370
180
85
2000
65
270
16
3.1
5.2
1.0
28
14
MAX.
10
±10
2.5
18
27
UNIT
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VGS
VGS
Wave Form
10%
0
VGS(on) 90%
VDD
ID
90%
ID
ID
0 10%
Wave Form
90%
10%
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14064EJ2V0DS
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