2SK3295 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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2SK3295 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3295
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3295 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 18 A)
• Low gate charge
QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3295
TO-220AB
2SK3295-S
TO-262
2SK3295-ZK
TO-263(MP-25ZK)
2SK3295-ZJ
TO-263(MP-25ZJ)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
20
V
±20
V
±35
A
±140
A
1.5
W
35
W
150
°C
−55 to +150 °C
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14064EJ2V0DS00 (2nd edition)
The mark ! shows major revised points.
Date Published April 2001 NS CP(K)
Printed in Japan
©
1999, 2000
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