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HMMC-5040DC Ver la hoja de datos (PDF) - HP => Agilent Technologies

Número de pieza
componentes Descripción
Fabricante
HMMC-5040DC
HP
HP => Agilent Technologies HP
HMMC-5040DC Datasheet PDF : 6 Pages
1 2 3 4 5 6
HMMC-5040 Typical Performance, continued
35 VDD = 4.5 V, IDD = 300 mA @ TA = 25°C 40
30
25
Gain
20
35
0.06 dB/°C
30
25
22 GHz
28 GHz
38 GHz
25 GHz
30 GHz
35 GHz
40 GHz
15
20
Power
10
15
–60 –30
0
30
60
90
OPERATING TEMPERATURE (°C)
Figure 6. Small-Signal Gain[3] and
Compressed Power[1] vs. Temperature.
20
16
12
VDD = 4.5 V
IDD = 300 mA
8
VDD = 2.0 V
IDD = 170 mA
VDD = 3.0 V
4
IDD = 130 mA
0
20
24
28
32
36
40
FREQUENCY (GHz)
Figure 7. Noise Figure vs. Frequency.
23 VDD = 4.5 V
25
21 Power
21
19
17
Efficiency
17
13
15
9
13
5
100
200
300
TOTAL DRAIN CURRENT, IDD (mA)
Figure 8. Output Power[1] and
Efficiency vs. Drain Current with
VDD = 4.5 V.
30 VDD = 4.5 V, IDD = 300 mA, f = 40GHz 20
26 Gain
25
22
10
18
5
14
ηadded
10
0
6
10
14
18
22
26
OUTPUT POWER (dBm)
Figure 10. Gain Compression and
Efficiency Characteristics.[2]
23 GHz
28 GHz
38 GHz
42 GHz
23 VDD = 3 V
25
21
Power
19
17
21
17
Efficiency 13
15
9
13
5
100
200
300
TOTAL DRAIN CURRENT, IDD (mA)
Figure 9. Output Power[1] and
Efficiency vs. Drain Current with
VDD = 3 V.
30 VDD = 4.5 V, IDD = 300 mA
30
26 PSAT
22
Gain
26
22
18
18
P–1dB
14
14
10
10
20
24
28
32
36
40
FREQUENCY (GHz)
Figure 11. Output Power and Gain vs.
Frequency Characteristics.[2]
Notes:
1. Output power into 50 with 2 dBm input power. Wafer-probed measurements.
2. Wafer-probed measurements.
3. Measurements taken on a device mounted in a connectorized package calibrated at the connector terminals.
6-62
23 GHz
28 GHz
38 GHz
42 GHz

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