K3156 Ver la hoja de datos (PDF) - Renesas Electronics
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Fabricante
K3156 Datasheet PDF : 8 Pages
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2SK3156
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
150
±20
20
80
20
20
30
75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 150
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
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13
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Note: 4. Pulse test
Typ
—
—
—
—
—
50
60
22
1750
600
300
18
125
400
190
0.9
170
Max
—
—
±10
10
2.5
70
80
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 150 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 VNote4
ID = 10 A, VGS = 4 V Note4
ID = 10 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3 Ω
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0
diF/ dt = 50 A/µs
Rev.3.01 Apr 27, 2006 page 2 of 7
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