K3148 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
K3148 Datasheet PDF : 8 Pages
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2SK3148
Static Drain to Source on State
Resistance vs. Temperature
250
Pulse Test
200
150
5,10 A
15 A
100
VGS = 4 V
50
10 V
0
–40
0
40
15 A
5,10 A
80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
200
VGS = 0, Ta = 25°C
100
50
20
10
5
2
1
0.1 0.3 1 3 10 30 50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
200
ID = 15 A
160
VDD = 100 V
50 V
25 V
120
20
VGS
16
12
VDS
80
8
40
VDD = 100 V
4
50 V
25 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
50
20
Tc = –25°C
10
25°C
75°C
5
2
1
VDS = 10 V
Pulse Test
0.5
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Typical Capacitance
vs. Drain to Source Voltage
10000
5000
2000
1000
Ciss
500
200
100
50
20 VGS = 0
f = 1 MHz
10
0
10
20
Coss
Crss
30 40 50
Drain to Source Voltage VDS (V)
1000
500
200
100
Switching Characteristics
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
td(off)
tf
50
tr
20
10
0.1 0.2
td(on)
0.5 1 2
50 10 20
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
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