K3148 Ver la hoja de datos (PDF) - Renesas Electronics
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Fabricante
K3148 Datasheet PDF : 8 Pages
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2SK3148
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
100
±20
20
80
20
20
40
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS 100
—
—
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA VDS = 100 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
VGS(off)
1.0
—
2.5
V ID = 1 mA, VDS = 10 V
RDS(on)
—
45
60
mΩ ID = 10 A, VGS = 10 VNote4
RDS(on)
—
65
85
mΩ ID = 10 A, VGS = 4 V Note4
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8.5
14
—
S ID = 10 A, VDS = 10 V Note4
Input capacitance
Ciss
—
900
—
pF VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
400
—
pF f = 1 MHz
Reverse transfer capacitance
Crss
—
210
—
pF
Turn-on delay time
td(on)
—
15
—
Rise time
tr
—
120
—
Turn-off delay time
td(off)
—
200
—
Fall time
tf
—
150
—
Body–drain diode forward voltage
VDF
—
0.9
—
Body–drain diode reverse recovery
trr
time
—
90
—
Note: 4. Pulse test
ns ID = 10 A, VGS = 10 V,
ns RL = 3 Ω
ns
ns
V IF = 20 A, VGS = 0
ns IF = 20 A, VGS = 0
diF/ dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
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