K3159 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
K3159 Datasheet PDF : 4 Pages
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2SK3159
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 23 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
ADE-208-774 (Z)
Target Specification
1st. Edition
February 1999
D
G
1. Gate
1
2
3
2. Drain
(Flange)
3. Source
S
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