2SK3210 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK3210

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3210(L), 2SK3210(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 150

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

I GSS

—

Zero gate voltege drain current

I DSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance

|yfs|

18

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

Typ Max

—

—

—

—

—

±10

—

10

—

2.5

35

45

42

75

30

—

2600 —

820 —

350 —

25

—

180 —

600 —

280 —

0.95 —

110 —

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VGS = ±16V, VDS = 0

VDS = 150 V, VGS = 0

ID = 1mA, VDS = 10V

ID = 15A, VGS = 10VNote4

ID = 15A, VGS = 4V Note4

ID = 15A, VDS = 10V Note4

VDS = 10V

VGS = 0

f = 1MHz

ID = 15A, VGS = 10V

RL = 2Ω

IF = 30A, VGS = 0

IF = 30A, VGS = 0

diF/ dt =50A/µs

3

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