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Número de pieza
componentes Descripción
2SK3125(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SK3125
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
2SK3125 Datasheet PDF : 0 Pages
2SK3125
r
th
-
t
w
10
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10
m
0.01
100
m
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
0.833°C/W
1m
10 m
100 m
1
10
Pulse width t
w
(S)
Safe operating area
1000
ID max (pulse)
*
ID max
100
(continuous)
100
m
s
*
1 ms
*
DC operation
Tc
=
25°C
10
*
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated
linearly with increase in
temperature.
1
0.1
1
VDSS max
10
100
Drain-source voltage V
DS
(V)
1000
800
E
AS
– T
ch
600
400
200
0
25
50
75
100
125
150
Channel temperature (initial) T
ch
(°C)
15 V
-
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
W
V
DD
=
25 V
、
L
=
140
m
H
Wave form
Ε
AS
=
1
2
×
L
×
I2
×
ççèæ
BVDSS
BVDSS
-
VDD
÷÷øö
5
2002-08-23
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