2SK3125(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
| 2SK3125 Datasheet PDF : 0 Pages | |||
2SK3125
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 30 A
VDS = 10 V, ID = 30 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾
¾
±10
mA
¾
¾
100
mA
30
¾
¾
V
1.5
¾
3.0
V
¾
5.3 7.0 mW
30
60
¾
S
¾ 4600 ¾
¾ 1400 ¾
pF
¾ 2300 ¾
tr
VGS10 V
0V
ton
tf
ID = 30 A
¾
25
¾
VOUT
RL = 0.5 W ¾
40
¾
ns
VDD ~- 15 V
¾ 150 ¾
toff
Duty <= 1%, tw = 10 ms
¾
425
¾
Qg
Qgs
VDD ~- 24 V, VGS = 10 V, ID = 70 A
Qgd
¾
130
¾
¾
90
¾
nC
¾
40
¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 70 A, VGS = 0 V
IDR = 70 A, VGS = 0 V,
dIDR/dt = 50 A/ms
Min Typ. Max Unit
¾
¾
70
A
¾
¾
210
A
¾
¾
-1.7
V
¾
150
¾
ns
¾
225
¾
nC
Marking
TOSHIBA
K3125
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-08-23
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