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Número de pieza
componentes Descripción
K3085(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
K3085
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
K3085 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3085
r
th
-
t
w
3
1
Duty
=
0.5
0.5
0.3
0.2
0.1
0.05
0.03
0.01
0.005
0.003
10
m
0.1
0.05
0.02
Single pulse
0.01
100
m
1m
10 m
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
1.67°C/W
100 m
1
10
Pulse width t
w
(S)
Safe operating area
100
50
30
ID max (pulse)
*
10
ID max
5
(continuous)
3
100
m
s
*
1 ms
*
1
DC operation
Tc
=
25°C
0.5
0.3
0.1
0.05
0.03
0.01
1
*
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated linearly
with increase in temperature.
VDSS max
3
10
30 100
300
Drain-source voltage V
DS
(V)
1000
E
AS
– T
ch
250
200
150
100
50
0
25
50
75
100
125
150
Channel temperature Tch (°C)
15 V
-
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
W
V
DD
=
90 V, L
=
28.8 mH
Wave form
Ε
AS
=
1
2
×
L
×
I2
×
ççèæ
BVDSS
BVDSS
-
VDD
÷÷øö
5
2002-08-09
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