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Número de pieza
componentes Descripción
K3085(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
K3085
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
K3085 Datasheet PDF : 6 Pages
1
2
3
4
5
6
10
Common source
VGS
=
10 V
Pulse test
8
R
DS (ON)
– Tc
6
4
ID
=
2.5 A
1
2
0
-
80
-
40
0
40
80
120
160
Case temperature Tc (°C)
2SK3085
30
Common source
Tc
=
25 °C
Pulse test
10
5
3
I
DR
– V
DS
1
0.5
10
0.3
VGS
=
0,
-
1 V
3
0
1
-
0.2
-
0.4
-
0.6
-
0.8
-
1.0
-
1.2
Drain-source voltage V
DS
(V)
Capacitance – V
DS
3000
1000
Ciss
500
300
100
50
30
Common source
10
VGS
=
0 V
f
=
1 MHz
Tc
=
25 °C
3
1
35
10
Coss
Crss
30 50
100
Drain-source voltage V
DS
(V)
V
th
– Tc
5
Common source
VDS
=
10 V
4
ID
=
1 mA
Pulse test
3
2
1
0
-
80
-
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
– Tc
100
80
60
40
20
0
0
40
80
120
160
200
Case temperature Tc (°C)
4
2002-08-09
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