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Número de pieza
componentes Descripción
K3085(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
K3085
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
K3085 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2.0
Common source
Tc
=
25 °C
Pulse test
1.6
I
D
– V
DS
10
8
15
7
6
5.5
5
1.2
4.8
0.8
4.6
4.4
0.4
4.2
0
VGS
=
4 V
0
1
2
3
4
5
Drain-source voltage V
DS
(V)
2SK3085
5
Common source
Tc
=
25 °C
Pulse test
10
4
I
D
– V
DS
15
8
7
6
3
5.5
2
5
1
4.5
VGS
=
4 V
0
0
4
8
12
16
20
Drain-source voltage V
DS
(V)
4
Common source
VDS
=
20 V
Pulse test
3
I
D
– V
DS
Tc
= -
55 °C
25
2
100
1
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
V
DS
– V
GS
20
Common source
Tc
=
25 °C
Pulse test
16
12
8
ID
=
3.5 A
4
1.8
1
0
0
4
8
12
16
20
24
Gate-source voltage V
GS
(V)
10
Common source
VDS
=
20 V
Pulse test
5
3
ï
Y
fs
ï
– I
D
Tc
= -
55 °C
25
100
1
0.5
0.3
0.1
0.3 0.5
1
35
10
Drain current I
D
(A)
10
Common source
Tc
=
25 °C
Pulse test
5
R
DS (ON)
– I
D
3
VGS
=
10, 15 V
1
0.5
0.3
0.1
0.3 0.5
1
35
10
Drain current I
D
(A)
3
2002-08-09
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