K3085(2002) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
K3085 Datasheet PDF : 6 Pages
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2SK3085
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate -source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 mA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1.8 A
VDS = 10 V, ID = 1.8 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾
¾
±10
mA
±30
¾
¾
V
¾
¾
100
mA
600
¾
¾
V
2.0
¾
4.0
V
¾
1.7 2.2
W
2.0
3.0
¾
S
¾
800
¾
¾
6
¾
pF
¾
65
¾
tr
VG1S0 V
ton
0V
tf
¾
15
¾
ID = 1.8 A VOUT
¾
50
¾
RL = 111 W
ns
¾
15
¾
toff
Duty <= 1%, tw = 10 ms VDD ~- 220 V
¾
85
¾
Qg
¾
20
¾
Qgs
VDD ~- 400 V, VGS = 10 V, ID = 3.5 A
¾
10
¾
nC
Qgd
¾
10
¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = 3.5 A, VGS = 0 V
IDR = 3.5 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾
¾
3.5
A
¾
¾
14
A
¾
¾
-1.7
V
¾
400
¾
ns
¾
2.6
¾
mC
Marking
K3085
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-08-09
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