2SK3204 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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2SK3204

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3204

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3204 is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

• FEATURES

• Low on-state resistance :

RDS(on)1 = 34 mΩ (MAX.) (VGS = 10 V, ID = 8 A)

RDS(on)2 = 50 mΩ (MAX.) (VGS = 4 V, ID = 8 A)

• Low Ciss : Ciss = 940 pF (TYP.)

• Built-in gate protection diode.

• ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3204

MP-10

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

VDSS

60

V

Gate to Source Voltage

VGSS(AC)

±20

V

Gate to Source Voltage

VGSS(DC)

+20, −10

V

Drain Current (DC)

Drain Current (pulse) Note1

ID(DC)

±15

A

ID(pulse)

±45

A

Total Power Dissipation (TA = 25 °C)

PT

1.8

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

• Single Avalanche Current Note2

IAS

• Single Avalanche Energy Note2

EAS

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

−55 to +150 °C

15

A

22.5

mJ

2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V

THERMAL RESISTANCE

Channel to Ambient

Rth(ch-A)

69.4 °C/W

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D13796EJ1V0DS00 (1st edition)

The mark • shows major revised points.

©

Date Published April 1999 NS CP (K)

Printed in Japan

1998, 1999

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