2SK2885S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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componentes Descripción

Fabricante

2SK2885S

Silicon N-Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown V(BR)DSS

30

voltage

Gate to source breakdown V(BR)GSS

±20

voltage

Zero gate voltege drain

I DSS

—

current

Gate to source leak current IGSS

—

Gate to source cutoff voltage VGS(off)

1.0

Static drain to source on state RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance |yfs|

20

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

2SK2885(L), 2SK2885(S)

Typ

Max

—

—

—

—

—

10

—

±10

—

2.0

10

14

15

25

30

—

1570 —

1100 —

410

—

32

—

300

—

180

—

200

—

1.0

—

75

—

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = 30 V, VGS = 0

VGS = ±16V, VDS = 0

ID = 1mA, VDS = 10V

ID = 20A, VGS = 10V*1

ID = 20A, VGS = 4V*1

ID = 20A, VDS = 10V*1

VDS = 10V

VGS = 0

f = 1MHz

VGS = 10V, ID = 20A

RL = 0.5Ω

IF = 45A, VGS = 0

IF = 45A, VGS = 0

diF/ dt = 50A/µs

See characteristics curves of 2SK2737

3

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