2SK2885S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK2885S

Silicon N-Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2885(L), 2SK2885(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 10mΩ typ.

• 4V gate drive devices.

• High speed switching

Outline

LDPAK

D

G

S

ADE-208-545 A

2nd. Edition

4

4

1

2

3

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

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