Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
2SK2726 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK2726
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2726 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
2SK2726
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A /
µ
s
10
0.1 0.3
V
GS
= 0, Ta = 25
°
C
1 3 10 30 100
Reverse Drain Current I
DR
(A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
100
Coss
50
20
10
5 V
GS
= 0
2
f = 1 MHz
0
10
20
Crss
30 40 50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
20
V
DS
V
DD
= 100 V
400
250 V
16
400 V
300
12
V
GS
200
8
I
D
=7A
100
0
V
DD
= 400 V
4
250 V
100 V
0
8
16 24
32 40
Gate Charge Qg (nc)
1000
Switching Characteristics
300
100
t
d(off)
30
tf
tr
10
t
d(on)
3
1
0.1 0.3
V
GS
= 10 V, V
DD
= 30 V
PW = 10
µ
s, duty < 1 %
1 3 10 30 100
Drain Current I
D
(A)
6
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]