2SK2117 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK2117

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2116, 2SK2117

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK2116

2SK2117

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

Symbol

VDSS

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

450

V

500

±30

V

7

A

28

A

7

A

35

W

150

°C

–55 to +150

°C

2

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