BSH107 Ver la hoja de datos (PDF) - Philips Electronics
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BSH107 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH107
Normalised Power Dissipation, PD (%)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Ta)
Normalised Drain Current, ID (%)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Ta); conditions: VGS ≥ 4.5 V
Peak Pulsed Drain Current, IDM (A)
100
10 RDS(on) = VDS/ ID
1
0.1
d.c.
BSH107
tp = 100us
1 ms
10 ms
100 ms
0.01
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area. Ta = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Peak Pulsed Drain Current, IDM (A)
1000
D = 0.5
100
0.2
0.1
10
0.05
0.02
PD
1 single pulse
BSH107
tp D = tp/T
0.1
T
0.01
1E-06
1E-05
1E-04 1E-03 1E-02 1E-01
Pulse width, tp (s)
1E+00 1E+01
Fig.4. Transient thermal impedance.
Zth j-a = f(t); parameter D = tp/T
Drain Current, ID (A)
5
4.5
4.5V
2.5V
1.8 V
BSH107
1.6 V
4
Tj = 25 C
3.5
VGS = 1.5 V
3
1.4 V
2.5
2
1.3 V
1.5
1
1.2 V
0.5
1.1 V
0
0
0.2
0.4
0.6
0.8
1
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Drain-Source On Resistance, RDS(on) (Ohms)
0.3
1.2 V 1.3 V
1.4 V
0.25
1.5 V
BSH107
0.2
1.6 V
0.15
1.8 V
0.1
2.5 V
0.05
Tj = 25 C
0
0 0.5 1
1.5 2 2.5 3
Drain Current, ID (A)
VGS = 4.5 V
3.5 4 4.5 5
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
August 1998
3
Rev 1.000
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