2SK2129 Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Fabricante
2SK2129 Datasheet PDF : 3 Pages
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Power F-MOS FETs
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
10 IDP
ID
t=100µs
1
1ms
10ms
DC
0.1
0.01
1
10
100
1000
Drain to source voltage VDS (V)
ID VDS
4
VGS=15V
10V
6V
TC=25˚C
3
5.5V
2
5V
1
4.5V 50W
4V
0
0 10 20 30 40 50 60
Drain to source voltage VDS (V)
VDS VGS
80
TC=25˚C
70
60
50
40
30
ID=6A
20
10
3A
1.5A
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V)
PD Ta
60
(1) TC=Ta
(2) Without heat sink
50
(PD=2W)
40
(1)
30
20
10
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VGS
5
VDS=25V
4
TC=0˚C 150˚C
3
25˚C
100˚C
2
1
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on) ID
12
VGS=10V
10
TC=150˚C
8
100˚C
6
25˚C
4
0˚C
2
0
0
1
2
3
4
5
Drain current ID (A)
2SK2129
EAS Tj
30
VDD=50V
ID=3A
25
20
15
10
5
0
25 50 75 100 125 150 175
Junction temperature Tj (˚C)
Vth TC
6
VDS=25V
ID=1mA
5
4
3
2
1
0
0 25 50 75 100 125 150
Case temperature TC (˚C)
| Yfs | ID
3.0
VDS=25V
TC=25˚C
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
Drain current ID (A)
2
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