10000
3000
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
VDS = 5 V
Pulsed
1000
300
100
TA = −25˚C
25˚C
75˚C
150˚C
30
10
1
3
10
30 100 300 1000
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
VGS = 4 V
Pulsed
2
TA = 150˚C
75˚C
25˚C
1
−25˚C
0
10
30
100
300
ID - Drain Current - mA
1000
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
300
100
Ciss
30
Coss
10
Crss
3
VGS = 0 V
f = 1 MHZ
1
0.1 0.3
1
3
10 30 100
VDS - Drain to Source Voltage - V
2SK1584
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
3
ID = 0.3 A
Pulsed
2
1
0
0 4 8 12 16 20 24 28
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
3
ID = 0.3 A
Pulsed
2
VGS = 4 V
1
VGS = 10 V
0
–30 0
30 60 90 120 150
Tch - Channel Temperature - ˚C
10000
SWITCHING CHARACTERISTICS
300
100
30
10
10
tr
td(off)
tf
td(on)
VDD = 10 V
VGS(on) = 4 V
RG = 10 Ω
30
100
300
ID - Drain Current - mA
1000
4
Data Sheet D15283EJ2V0DS